منابع مشابه
Optical Properties Of Metastable Shallow Acceptors In Mg‐Doped GaN Layers Grown By Metal‐Organic Vapor Phase Epitaxy
GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samp...
متن کاملSelectively Excited Blue Luminescence in heavily Mg doped p - type GaN
The emission at -2.8 eV from heavily doped p-GaN, known as the blue luminescence (BL), has been studied by selective excitation using a dye laser tunable between 2.7-3.0 eV. The peak position and intensity of the BL are found to exhibit an unusual dependence on the excitation photon energy. We have explained our results with a shallow-donor and deep-acceptors pair recombination model which incl...
متن کاملOptical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy
Low-temperature photoluminescence (PL) and optically detected magnetic resonance (ODMR) at 24GHz have been performed on a series of MBE-grown Mg-doped (10–10 cm ) GaN homoepitaxial layers. High-resolution PL at 5K revealed intense bandedge emission with narrow linewidths (0.2–0.4meV) attributed to annihilation of excitons bound to shallow Mg acceptors. In contrast to many previous reports for G...
متن کاملWhat determines the emission peak energy of the blue luminescence in highly Mg-doped p-GaN?
We report a study of the 2.8 eV blue luminescence ~BL! in heavily Mg-doped p-GaN via resonant excitation with a tunable blue dye laser. The dependence of the BL on the excitation photon energy (Eex) is unlike that of the yellow luminescence found in n-type GaN. An Urbach-type band tail, with Urbach parameter of 33 meV is observed in the vicinity of the BL energy. We propose that the peak energy...
متن کاملIMPURITY DECORATION OF NATIVE VACANCIES IN Ga AND N SUBLATTICES OF GALLIUM NITRIDE
The e ects of impurity atoms as well as various growth methods to the formation of vacancy type defects in gallium nitride (GaN) have been studied by positron annihilation spectroscopy. It is shown that vacancy defects are formed in Ga or N sublattices depending on the doping of the material. Vacancies are decorated with impurity atoms leading to the compensation of the free carriers of the sam...
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تاریخ انتشار 2013